Broadband Silicon Electro-Optic Absorption Modulator
نویسندگان
چکیده
Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50μm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 2008 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (230.2090) Electro-optical devices; (230.4110) Modulators
منابع مشابه
10 Gb/s broadband silicon electro-optic absorption modulator
Article history: Received 9 December 2009 Received in revised form 22 March 2010 Accepted 22 March 2010 Here we propose a design for a novel broadband silicon electro-optic absorption modulator. The device is simply a 100 μm long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the...
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